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Part Name
Description
C3357 View Datasheet(PDF) - California Eastern Laboratories.
Part Name
Description
Manufacturer
C3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
California Eastern Laboratories.
C3357 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
NE85634 / 2SC3357
SMITH CHART
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V
0.007.413300.008.42
0.00.941
120
0.10
0.40
110
ENT
0.11
0.39
100
0.12
0.13
0.38
0.37
90
0.2
0.4
0.14
0.36
80
0.15
0.35
70
0.03.416
60
0.303.17
500.302.18
0.6
0.8
1.0
3.0
4.0
6.0
0.1
0.2
0.3
0.4
10
S
11e
f = 20 GHz
20
50
REACTANCE COMPONENT
( )
––RZ–
O
–
0.2
f = 0.2 GHz
0.4
0.6
S
0.8
22e
f = 0.2 GHz
f = 2.0 GHz
: I
C
= 20 mA
: I
C
= 40 mA
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
120˚
f = 0.2 GHz
60˚
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
120˚
60˚
f = 2.0 GHz
150˚
S
21e
30˚
150˚
30˚
S
12e
180˚
f = 2.0 GHz
3
6
9 12 15
0˚ 180˚
f = 0.2 GHz
0.1 0.2 0.3 0.4 0.5
0˚
–150˚
–120˚
–90˚
–30˚ –150˚
–60˚
–120˚
–90˚
–30˚
–60˚
Data Sheet PU10211EJ01V0DS
5
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