MC33395 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MC33395

Three-Phase Gate Driver IC

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions -40°C ≤ TA ≤ 125°C, 5.5 V ≤ VIGNP ≤ 24 V unless otherwise noted. Typical values

reflect approximate parameter mean at TA = 25°C under normal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

High-Side (GDHn) and Low-Side Drivers (GDHn) Rise Time

t RH

(25% to 75%), CISS Value = 2000 pF (8)

µs

–

0.35

1.5

High-Side (GDHn) and Low-Side Drivers (GDHn) Fall Time

t FH

µs

(75% to 25%), CISS Value = 2000 pF (8)

–

0.25

1.5

Shoot-Through Suppression Time Delay (33395) (8), (9)

33395

33395T

t D1, t D2

µs

1.0

3.0

5.5

0.2

0.65

1.0

Current Limit Time Delay (10)

t ILIMDELAY

1.5

2.8

5.0

µs

Notes

8. See Figure 4, page 8.

9. Shoot-Through Suppression Time Delay is provided to prevent directly connected high- and low-side MOSFETs from being on

simultaneously.

10. Current Limit Time Delay: The internal comparator places the device in the current limit mode when the comparator output goes LOW

and sets an internal logic bit. This takes a finite amount of time and is stated as the Current Limit Time Delay.

TIMING DIAGRAM

100

75

25

0

100

tD1

tFL

tRH tFH

tD2

tRL

75

25

0

TIME

Figure 4. Shoot-Through Suppression

33395

8

Analog Integrated Circuit Device Data

Freescale Semiconductor

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