IPW60R160C6 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IPW60R160C6

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

Table 16

Typ. transfer characteristics

600V CoolMOS" C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Typ. gate charge

ID=f(VGS); VDS=20V

Table 17

Avalanche energy

VGS=f(Qgate), ID=11.3 A pulsed

Drain-source breakdown voltage

EAS=f(Tj); ID=4.1 A; VDD=50 V

Final Data Sheet

VBR(DSS)=f(Tj); ID=0.25 mA

11

Rev. 2.12, 20104-012-092

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