6R160C6 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
6R160C6 Datasheet PDF : 18 Pages
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600V CoolMOS" C6 Power Transistor
1
Description
CoolMOS" is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS" C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPA60R160C6, IPB60R160C6
IPP60R160C6 IPW60R160C6
drain
pin 2
gate
pin 1
source
pin 3
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.16
75
70
6
500
V
!
nC
A
µJ
A/µs
Type / Ordering Code
IPW60R160C6
IPB60R160C6
IPP60R160C6
IPA60R160C6
Package
PG-TO247
PG-TO263
PG-TO220
PG-TO220 FullPAK
1) J-STD20 and JESD22
Final Data Sheet
2
Marking
6R160C6
Related Links
IFX C6 Product Brief
IFX C6 Portfolio
IFX CoolMOS Webpage
IFX Design tools
Rev. 2.12, 20104-012-092
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