6R160C6 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

6R160C6

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

3

Thermal characteristics

600V CoolMOS" C6 Power Transistor

IPx60R160C6

Thermal characteristics

Table 3 Thermal characteristics TO-220 (IPP60R160C6),TO-247 (IPW60R160C6)

Parameter

Symbol

Min.

Values

Typ.

Max.

Unit Note /

Test Condition

Thermal resistance, junction - case RthJC

-

-

0.71

°C/W

Thermal resistance, junction -

RthJA

-

-

62

ambient

leaded

Soldering temperature,

Tsold

-

-

260

°C 1.6 mm (0.063 in.)

wavesoldering only allowed at

from case for 10 s

leads

Table 4 Thermal characteristics TO-220FullPAK (IPA60R160C6)

Parameter

Symbol

Values

Min.

Typ.

Max.

Thermal resistance, junction - case RthJC

-

-

3.67

Thermal resistance, junction -

RthJA

-

-

80

ambient

Soldering temperature,

Tsold

-

-

260

wavesoldering only allowed at

leads

Unit Note /

Test Condition

°C/W

leaded

°C 1.6 mm (0.063 in.)

from case for 10 s

Table 5 Thermal characteristics TO-263 (IPB60R160C6)

Parameter

Symbol

Min.

Values

Typ.

Max.

Unit Note /

Test Condition

Thermal resistance, junction - case RthJC

-

-

0.71

°C/W

Thermal resistance, junction -

RthJA

-

-

62

ambient

SMD version, device

on PCB, minimal

footprint

-

35

-

SMD version, device

on PCB, 6cm2 cooling

area1)

Soldering temperature,

Tsold

-

-

260

°C reflow MSL1

wave- & reflow soldering allowed

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.

PCB is vertical without air stream cooling.

Final Data Sheet

5

Rev. 2.12, 20104-012-092

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