180N10N View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
180N10N Datasheet PDF : 9 Pages
| |||
IPA180N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
min.
Values
typ.
Unit
max.
-
-
5 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D=1 mA
100
V GS(th) V DS=V GS, I D=35 µA
2
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
V DS=100 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=28 A
-
-
2.7
0.1
10
1
15.5
-V
3.5
1 µA
100
100 nA
18 mΩ
Gate resistance
Transconductance
V GS=6 V, I D=14 A
-
19.2
33
RG
-
1.4
g fs
|V DS|>2|I D|R DS(on)max,
I D=28 A
19
37
-Ω
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-07-09
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