MGFC5218 View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

MGFC5218

K-Band 2-Stage Power Amplifier

MITSUBISHI ELECTRIC  

PRELIMINARY

Notice : This is not a final specification

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGFC5218

K-Band 2-Stage Power Amplifier

DESCRIPTION

The MGFC5218 is a GaAs MMIC chip especially

designed for 18.0 ~ 19.0 GHz band High

Power Amplifier (MPA) .

BLOCK DIAGRAM

Vg1 Vg2 Vd1 Vd2

FEATURES

RF frequency : 18.0 to 19.0 GHz

In

Out

P1dB

: ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz

Vd1

Vg1 Vg2 Vd1 Vd2

Chip size: 1940 µm x 2000 µm

TARGET SPECIFICATIONS (Ta=25˚C)

Symbol

IDSS1

IDSS2

Vp1

Vp2

Parameter

Drain Saturation Current

Drain Saturation Current

Pinch Off Voltage

Pinch Off Voltage

P1dB

Output Power at 1 dB

Compression Point

Gain

Gain

Input Return Loss Input Return Loss

Output Return Loss Output Return Loss

IM3

Inter Modulation Level

Test Conditions

Vd=3.0V

Vd=3.0V,Id=0.6mA

Vd=3.0V,Id=1.2mA

f=18 - 20 GHz,

Vd1=Vd2=6.0V ,

Id1=360mA*,

Id2=720mA*

f=18 - 20 GHz,

Vd1=Vd2=6.0V ,

Id1=360mA*,

Id2=720mA*

Pout=TBD

*:Ids at RF off

Min.

-2.0

-2.0

29.0

TBD

Limits

Typ.

720

1440

15.0

8.0

8.0

Max. Unit

mA

mA

-1.0

V

-1.0

V

dBm

dB

dB

dB

dBc

MITSUBISHI

ELECTRIC

as of July '98

Share Link: