NE6510179A View Datasheet(PDF) - NEC => Renesas Technology
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Description
Manufacturer
NE6510179A Datasheet PDF : 8 Pages
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NE6510179A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
8
V
Gate to Source Voltage
VGSO
–4
V
Drain Current
ID
2.8
A
Gate Forward Current
IGF
25
mA
Gate Reverse Current
IGR
25
mA
Total Power Dissipation
Ptot
15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–65 to +150
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Condition
MIN. TYP. MAX. Unit
−
3.5
5.5
V
−
−
5.0Note
dB
−
−
+110
°C
Note Recommended maximum Gain Compression is 3.0 dB at VDS > 4.2 V
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear GainNote 1
Symbol
IDSS
Vp
BVgd
Test Conditions
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, ID = 14 mA
Igd = 14 mA
Rth
Channel to Case
Pout
f = 1.9 GHz, VDS = 3.5 V,
ID
Pin = +25 dBm, Rg = 100 Ω,
ηadd
IDset = 200 mA (RF OFF)
GL
Note 2
MIN. TYP. MAX. Unit
−
2.4
−
A
–2.0
−
–0.4
V
12
−
−
V
−
5
31.5
32.5
−
0.72
50
58
−
10.0
8
°C/W
−
dBm
−
A
−
%
−
dB
Notes 1. Pin = 0 dBm
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet P13496EJ4V0DS00
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