3N80K5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

3N80K5

N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK

STMicroelectronics 

Electrical characteristics

STD3N80K5, STF3N80K5, STP3N80K5,

STU3N80K5

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Symbol

Parameter

Table 5: On/off-state

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

IGSS

VGS(th)

RDS(on)

Gate body leakage current

Gate threshold voltage

Static drain-source

on-resistance

VGS = 0 V, VDS = 800 V

VGS = 0 V, VDS = 800 V,

TC = 125 ° C(1)

VDS = 0 V, VGS = ±20 V

VDD = VGS, ID = 100 µA

VGS = 10 V, ID = 1 A

Min. Typ. Max. Unit

800

V

1 µA

50 µA

±10 µA

3

4

5

V

2.8 3.5 Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Ciss Input capacitance

Coss Output capacitance

Crss

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

Co(tr)(1)

Co(er)(2)

Equivalent capacitance time

related

Equivalent capacitance

energy related

VGS = 0 V, VDS = 0 to 640 V

Rg Intrinsic gate resistance

f = 1 MHz, ID= 0 A

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 2.5 A

VGS= 0 to 10 V

(see Figure 19: "Test circuit

for gate charge behavior")

Min. Typ. Max. Unit

- 130 - pF

-

14

-

pF

- 0.6 - pF

-

20

-

pF

-

9

- pF

- 15.5 -

Ω

- 9.5 - nC

- 1.5 - nC

- 7.5 - nC

Notes:

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.

4/24

DocID025000 Rev 4

Share Link: