DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SST25VF032B-80-4I-QAF View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
SST25VF032B-80-4I-QAF
Microchip
Microchip Technology Microchip
SST25VF032B-80-4I-QAF Datasheet PDF : 33 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
A Microchip Technology Company
32 Mbit SPI Serial Flash
SST25VF032B
Data Sheet
Table 5: Device Operation Instructions (Continued) (2 of 2)
Instruction
Description
Address Dummy Data Maximum
Op Code Cycle1 Cycle(s)2 Cycle(s) Cycle(s) Frequency
EBSY
Enable SO as an out- 0111 0000b (70H)
0
put RY/BY# status dur-
ing AAI programming
0
0
80 MHz
DBSY
Disable SO as RY/BY# 1000 0000b (80H)
0
status during AAI pro-
gramming
0
0
80 MHz
T5.0 25071
1. One bus cycle is eight clock periods.
2. Address bits above the most significant bit can be either VIL or VIH.
3. 4KByte Sector Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH.
4. 32KByte Block Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH.
5. 64KByte Block Erase addresses: use AMS-A16, remaining addresses are don’t care but must be set either at VIL or VIH.
6. To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of
data to be programmed. Data Byte 0 will be programmed into the initial address [A23-A1] with A0=0, Data Byte 1 will be
programmed into the
initial address [A23-A1] with A0 = 1.
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
8. Manufacturer’s ID is read with A0 = 0, and Device ID is read with A0 = 1. All other address bits are 00H. The Manufac-
turer’s ID and device ID output stream is continuous until terminated by a low-to-high transition on CE#.
Read (25 MHz)
The Read instruction, 03H, supports up to 25 MHz Read. The device outputs the data starting from the
specified address location. The data output stream is continuous through all addresses until termi-
nated by a low to high transition on CE#. The internal address pointer will automatically increment until
the highest memory address is reached. Once the highest memory address is reached, the address
pointer will automatically increment to the beginning (wrap-around) of the address space. For example,
once the data from address location 3FFFFFH has been read, the next output will be from address
location 000000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A23-
A0]. CE# must remain active low for the duration of the Read cycle. See Figure 5 for the Read
sequence.
CE#
MODE 3
SCK MODE 0
0 123456 78
15 16
23 24 31 32 39 40
47 48 55 56 63 64 70
SI
03
ADD. ADD. ADD.
MSB
MSB
HIGH IMPEDANCE
SO
N
DOUT
N+1
DOUT
N+2
DOUT
N+3
DOUT
N+4
DOUT
MSB
1327 F06.0
Figure 5: Read Sequence
©2011 Silicon Storage Technology, Inc.
10
DS25071A
12/11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]