STGW20NC60VD View Datasheet(PDF) - STMicroelectronics
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STGW20NC60VD Datasheet PDF : 11 Pages
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STGW20NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs(1)
Forward Transconductance VCE = 15 V, IC= 20 A
15
S
Cies
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
2200
pF
Coes
Output Capacitance
225
pF
Cres
Reverse Transfer
50
pF
Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
ICL
Turn-Off SOA Minimum
Current
Table 8: Switching On
VCE = 390 V, IC = 20 A,
VGE = 15V,
(see Figure 21)
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω, VGE= 15V
100
140
nC
16
nC
45
nC
100
A
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390 V, IC = 20 A
RG= 3.3Ω, VGE= 15V, Tj= 25°C
(see Figure 19)
31
ns
11
ns
1600
A/µs
220
300
µJ
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390 V, IC = 20 A
RG= 3.3Ω, VGE= 15V, Tj=
125°C
(see Figure 19)
31
11.5
1500
450
ns
ns
A/µs
µJ
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Vcc = 390 V, IC = 20 A,
RGE = 3.3 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 19)
28
ns
100
ns
75
ns
Eoff (3)
Ets
Turn-off Switching Loss
Total Switching Loss
330
450
µJ
550
750
µJ
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Vcc = 390 V, IC = 20 A,
RGE = 3.3 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 19)
66
ns
150
ns
130
ns
Eoff (3) Turn-off Switching Loss
Ets
Total Switching Loss
(3)Turn-off losses include also the tail of the collector current.
770
µJ
1220
µJ
3/11
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