GW20NC60VD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

GW20NC60VD

N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT

STMicroelectronics 

STGW20NC60VD

Table 10: Collector-Emitter Diode

Symbol

Parameter

Vf

Forward On-Voltage

trr

Reverse Recovery Time

ta

Qrr

Reverse Recovery Charge

Irrm

Reverse Recovery Current

S

Softness factor of the diode

trr

Reverse Recovery Time

ta

Qrr

Reverse Recovery Charge

Irrm

Reverse Recovery Current

S

Softness factor of the diode

Test Conditions

If = 10 A

If = 10 A, Tj = 125 °C

If = 20 A ,VR = 40 V,

Tj = 25°C, di/dt = 100 A/µs

(see Figure 22)

If = 20 A ,VR = 40 V,

Tj =125°C, di/dt = 100 A/µs

(see Figure 22)

Min. Typ. Max. Unit

1.3

2.0

V

1

V

44

ns

32

ns

66

nC

3

A

0.375

88

ns

56

ns

237

nC

5.4

A

0.57

4/11

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