GW20NC60VD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

GW20NC60VD

N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT

STMicroelectronics 

Figure 15: Thermal Impedance

STGW20NC60VD

Figure 18: Ic vs Frequency

Figure 16: Turn-Off SOA

Figure 17: Emitter-Collector Diode Character-

istics

For a fast IGBT suitable for high frequency appli-

cations, the typical collector current vs. maximum

operating frequency curve is reported. That fre-

quency is defined as follows:

fMAX = (PD - PC) / (EON + EOFF)

1) The maximum power dissipation is limited by

maximum junction to case thermal resistance:

PD = ∆T / RTHJ-C

considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C

2) The conduction losses are:

PC = IC * VCE(SAT) * δ

with 50% of duty cycle, VCESAT typical value

@125°C.

3) Power dissipation during ON & OFF commuta-

tions is due to the switching frequency:

PSW = (EON + EOFF) * freq.

4) Typical values @ 125°C for switching losses are

used (test conditions: VCE = 390V, VGE = 15V,

RG = 3.3 Ohm). Furthermore, diode recovery en-

ergy is included in the EON (see note 2), while the

tail of the collector current is included in the EOFF

measurements (see note 3).

7/11

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