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IRS21867S View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRS21867S
IR
International Rectifier IR
IRS21867S Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRS21867S
Application Information and Additional Details
Informations regarding the following topics are included as subsections within this section of the datasheet.
IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Negative VS Transient SOA
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS21867 HVIC is designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several
parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive
the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch is
defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is sometimes
generically called VOUT and in this case does not differentiate between the high-side or low-side output voltage.
VB
(or VCC)
HO
(or LO)
VS
(or COM)
IO+
+
VHO (or VLO)
-
Figure 1: HVIC sourcing current
VB
(or VCC)
HO
(or LO)
IO-
VS
(or COM)
Figure 2: HVIC sinking current
www.irf.com
© 2010 International Rectifier
9

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