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Part Name
Description
IPS090N03L View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPS090N03L
OptiMOS®3 Power-Transistor
Infineon Technologies
IPS090N03L Datasheet PDF : 12 Pages
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13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
100
IPD090N03L G
IPS090N03L G
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=30 A pulsed
parameter:
V
DD
12
10
IPF090N03L G
IPU090N03L G
15 V
6V
24 V
8
100 °C
25 °C
10
150 °C
6
4
2
1
10
-1
10
0
10
1
10
2
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
0
10
3
0
4
8
12
16
20
Q
gate
[nC]
16 Gate charge waveforms
34
V
GS
32
30
28
26
V
g s(th)
24
22
Q
g(th)
20
-60
-20
20
60 100 140 180
T
j
[°C]
Q
gs
Rev. 1.0
page 7
Q
g
Q
sw
Q
gd
Q
gate
2006-10-23
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