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MAX17103ETJ View Datasheet(PDF) - Maxim Integrated

Part Name
Description
Manufacturer
MAX17103ETJ Datasheet PDF : 27 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DC-DC Converter with Integrated Scan Driver,
VGL Controller, Op Amp, and LDO for TFT LCD
ELECTRICAL CHARACTERISTICS (continued)
(VIN = +3V, Circuit of Figure 1, VOPAS = +8.5V, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
LX On-Resistance
ILX = 1A
LX Leakage Current
VLX = 13.5V, TA = +25°C
Current-Sense Transresistance
Soft-Start Pullup Current
GATE-OFF LINEAR REGULATOR CONTROLLER
FBN Fault Trip Level
VFBN rising
FBN Regulation Voltage
IDRVN = 100μA
FBN Line-Regulation Error
VIN = 2.5V to 5.5V, IDRVN = 100μA
FBN Input Bias Current
VFBN = 0, TA = +25°C
FBN Effective Load Regulation Error
(Transconductance)
VDRVN = -10V, IDRVN = 50μA to 1mA
0.200 0.500

10
20
μA
0.10 0.20 0.30 V/A
2
4
6
μA
370
420 470
mV
-20
+20 mV
-6
0
+6
mV
-200
+200 nA
11
25
mV
DRVN Source Current
DRVN Off-Leakage Current
Startup Delay from VFB = 90%
Soft-Start Period
GD SWITCH CONTROL
GD Pulldown Resistor
GD Pullup Resistor
VFBN = 300mV, VDRVN = -10V
VFBN = 0, VDRVN = -15V, TA = +25°C
UVLO or RST asserted
UVLO and RST unasserted
1
4
10
mA
10
20
μA
32
ms
3
ms
100

100

GD Low Voltage Level
GD High Voltage Level
VCOM BUFFER
Supply Voltage (VOPAS)
Input Bias Current
OPAS Supply Current
Output-Voltage Swing High
UVLO or RST asserted, VGHON > 11V
UVLO and RST unasserted, VGHON > 8V
VPOS = VOPAS/2, TA = +25°C
VPOS = VOPAS/2, no load
IOUT = 100μA
IOUT = 75mA
VGHON VGHON VGHON
- 12 - 11
-8
V
VGHON
V
6
15
V
-50
+50
nA
3
5
mA
VOPAS VOPAS
mV
- 20
-5
VOPAS VOPAS
V
- 1.5 - 1.3
Output-Voltage Swing Low
Slew Rate
-3dB Bandwidth
Short-Circuit Current
Input Offset Voltage
Gain-Bandwidth Product
VOLTAGE DETECTOR
Minimum VIN Operating Voltage
VDET Input Bias Current
VDET Threshold
Adjustable Delay Time Coefficient (K)
RST Sink Current
IOUT = 100μA
IOUT = 75mA
5V pulse at POS; both rising and falling edges
RL = 10k, CL = 10pF
Short to VOPAS/2, sourcing and sinking
TA = +25°C, VDET = 1.3V
VDET falling, hysteresis = 50mV
T = 120k
VRST = 0.4V
2
20
mV
1.5
1.8
V
12
50
V/μs
12
MHz
115 200
mA
-15
+15 mV
8
MHz
1.6
5.5
V
-1
+1
μA
1.078 1.1 1.122
V
80
120 160
k
1
8
mA
_______________________________________________________________________________________ 3

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