PUMD20,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMD20,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD20; PUMD20
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Min Typ Max
[1] -
-
625
[1] [2] -
-
625
[1] -
-
416
[1] [2] -
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
ICEO
collector-emitter
VCE = 30 V; IB = 0 A
cut-off current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
-
-
-
-
hFE
DC current gain
VCE = 5 V; IC = 20 mA
30
-
VCEsat collector-emitter
IC = 10 mA; IB = 0.5 mA
-
-
saturation voltage
VI(off)
off-state input
voltage
VCE = 5 V; IC = 1 mA
-
1.2
VI(on)
on-state input
voltage
VCE = 0.3 V; IC = 20 mA
2
1.6
R1
bias resistor 1 (input)
1.54 2.2
R2/R1 bias resistor ratio
0.8 1
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
-
-
TR2 (PNP)
-
-
Max Unit
100 nA
1
µA
50
µA
2
mA
-
150 mV
0.5 V
-
V
2.86 kΩ
1.2
2.5 pF
3
pF
9397 750 14419
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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