PUMD20,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMD20,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD20; PUMD20
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
103
hFE
102
10
006aaa015
(1)
(2)
(3)
103
VCEsat
(mV)
102
006aaa014
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
102
VI(on)
(V)
10
006aaa016
(1)
1
(2)
(3)
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa017
10
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
10−1
10−2
10−1
1
10
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14419
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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