SBYV28-150(2002) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SBYV28-150 Datasheet PDF : 2 Pages
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SBYV28-50 thru SBYV28-200
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curves
6.0
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
5.0
TL Lead Temperature
4.0
3.0
2.0
TA, Ambient Temperature
1.0 P.C.B. Mounted
0.5 x 0.5" (12 x 12mm)
Copper Pads
0
0
25 50 75 100 125 150 175
Temperature (°C)
Fig. 3 – Typical Instantaneous
Forward Characteristics
100
TJ = 100°C
10
TJ = 25°C
Pulse Width = 300µs
1
1% Duty Cycle
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 5 – Reverse Switching
Characteristics
60
IF = 4.0A
VR=30V
50
di/dt=150A/µs
di/dt=100A/µs
40
di/dt=20A/µs
di/dt=50A/µs
30
di/dt=100A/µs
di/dt=150A/µs
di/dt=50A/µs
20
di/dt=20A/µs
10
trr
Qrr
0
0
25 50 75 100 125 150 175
Junction Temperature (°C)
www.vishay.com
2
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
90
10ms Single Half Sine-Wave
80
TJ = 175°C
70
60
50
40
30
20
1
1,000
10
100
Number of Cycles at 50 HZ
Fig. 4 – Typical Reverse Leakage
Characteristics
100
TJ = 100°C
10
1
TJ = 25°C
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Junction Capacitance
100
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Document Number 88737
11-Feb-02
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