SBYV28-50-E3(2007) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SBYV28-50-E3 Datasheet PDF : 4 Pages
| |||
SBYV28-50 thru SBYV28-200
Vishay General Semiconductor
100
TJ = 100 °C
10
TJ = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
60
IF = 4.0 A
VR = 30 V
50
40
30
20
dI/dt = 150 A/µs
dI/dt = 100 A/µs
dI/dt = 20 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
dI/dt = 150 A/µs
dI/dt = 50 A/µs
dI/dt = 20 A/µs
10
0
0
trr
Qrr
25 50 75 100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Characteristics
1000
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 88737 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Share Link: 