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SBYV28-200 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
SBYV28-200
Vishay
Vishay Semiconductors Vishay
SBYV28-200 Datasheet PDF : 4 Pages
1 2 3 4
SBYV28-50, SBYV28-100, SBYV28-150, SBYV28-200
www.vishay.com
Vishay General Semiconductor
Soft Recovery Ultrafast Plastic Rectifier
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
Package
3.5 A
50 V, 100 V, 150 V, 200 V
90 A
20 ns
0.89 V
150 °C
DO-201AD
Diode variations
Single die
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Maximum RMS voltage
VRMS
35
70
105
140
Maximum DC blocking voltage
VDC
50
100
150
200
Minimum reverse breakdown voltage at 100 μA
VBR
55
110
165
220
Maximum average forward rectified current
0.375" (9.5 mm) lead lengths at TL = 85 °C
IF(AV)
3.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
90
Operating and storage temperature range
TJ, TSTG
-55 to +150
UNIT
V
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200
Maximum
instantaneous
forward voltage
3.5 A
TJ = 25 °C
TJ = 150 °C
VF (1)
1.1
0.89
Maximum DC reverse
TA = 25 °C
5.0
current at rated DC
blocking voltage
TA = 100
IR
°C
300
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
TJ = 25 °C
trr
20
Typical junction
capacitance
4.0 V, 1 MHz
CJ
20
Note
(1) Pulse test: tp = 300 μs pulse, duty cycle 2 %
UNIT
V
μA
ns
pF
Revision: 19-Feb-16
1
Document Number: 88737
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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