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TH8060JDF View Datasheet(PDF) - Melexis Microelectronic Systems

Part Name
Description
Manufacturer
TH8060JDF
Melexis
Melexis Microelectronic Systems  Melexis
TH8060JDF Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TH8060
LIN Bus Transceiver with integrated Voltage Regulator
Static Characteristics (continued)
Parameter
Comparator SI, SO
Input Current SI
Input Current SI
Threshold low SI
Threshold High SI
Hysteresis
Output voltage low at SO
Pull-up current at SO
Input VTR
Threshold low
Threshold high
Output current low
Output current high
Symbol Condition
Min Typ Max Unit
IINSI
-IINSI
VIL
VIH
VHYS
VOL
Ipu
0V VSI 18V
VSI = -12V
-20
20
µA
-1
mA
1.05 1.16
V
1.21 1.4
V
30
mV
IOUT = 1 mA, VSUP > 5.5 V
0.8
V
10 kSO to VCC, VCC > 3.3V
0.4
V
-500 -375 -250 µA
VTRL
VTRH
IOL
IOH
VCC > 3.3 V
0.15 0.25
VCC
0.75 0.85 VCC
160 230 300 µA
-300 -230 -160 µA
LIN-Bus-Interface
Power-on-reset threshold
Pull-up current TxD
Input voltage low TxD
Input voltage high TxD
Input voltage low BUS dominant
Input voltage high BUS recessive
Hysteresis BUS
Input current BUS recessive [2]
Input current BUS dominant
Pull up resistor BUS
Output voltage BUS dominant
Output voltage BUS recessive [1] [2]
Current limitation BUS
Output voltage low RxD
Output voltage high RxD
VPOR
Ipu
VIL
VIH
VIL
VIH
VHYS
IINBUSR
IINBUSD
RBUSpu
VBUSD
VBUSR
ILIM
VOL
VOH
VPOR =VRES1
3.0
-500
3.15
-375
0.75
0.55
50
8 VBUS 18 V,
VSUP= VBUS - 0.7V, TxD = high
VBUS = 0V, TxD = high
-1
20
30
VSUP = 12V, TxD = low
IBUS = 40 mA
8 VSUP 18 V, TxD = high
VBUS > 2.5V, TxD = low
40
IOUT = 1 mA
IOUT = -1 mA
VCC-0.8
3.3
-250
0.25
0.45
20
47
1.2
0.8
100
0.8
V
µA
VCC
VCC
VSUP
VSUP
mV
µA
mA
k
V
VBAT
mA
V
V
______________________________
[1] The recessive voltage at pin BUS don’t should be less than 80% of voltage at KL30 VBAT. The voltage at VSUP results with consideration of
reverse diode VSUP = VBAT - 0,7V
[2] See test circuit for dynamic characteristics on page 12
Datasheet Rev 1.1 March 2001
Page 10
www.melexis.com

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