SPN02N60C3(2004) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

SPN02N60C3
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

Rev. 2.1

SPN02N60C3

17 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

SPN02N60C3

720

V

18 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

10 4

pF

680

660

640

620

600

580

560

540

-60 -20 20

60 100

19 Typ. Coss stored energy

Eoss=f(VDS)

°C

180

Tj

10 3

Ciss

10 2

Coss

10 1

10 0

0

Crss

100 200 300 400

V

600

VDS

1.8

µJ

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0

100 200 300 400 V

600

VDS

Page 9

2004-03-01

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