Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
BSZ123N08NS3G View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSZ123N08NS3G
OptiMOS™3 Power-Transistor
Infineon Technologies
BSZ123N08NS3G Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
1 Power dissipation
P
tot
=f(
T
C
)
80
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
50
BSZ123N08NS3 G
40
60
30
40
20
20
10
0
0 25 50 75 100 125 150 175
T
C
[°C]
0
0 25 50 75 100 125 150 175
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
limited by on-state
resistance
10
2
1 µs
10 µs
1
0.5
10
1
10
0
10
-1
10
-1
Rev. 2.4
10
0
10
1
V
DS
[V]
100 µs
1 ms
10 ms
DC
10
2
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
page 4
2009-11-12
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]