D1472 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

D1472

Silicon NPN Epitaxial, Darlington

Hitachi -> Renesas Electronics 

2SD1472

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

120

120

7

1.5

3.0

1.0

150

Storage temperature

Tstg

–55 to +150

E to C diode forward current

ID

1.5

Notes: 1. Pluse ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 120 —

voltage

Collector to emitter breakdown V(BR)CEO 120 —

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

VCE(sat)1

—

—

—

—

2000 —

—

—

VCE(sat)2

—

—

Base to emitter saturation

VBE(sat)1

—

—

voltage

VBE(sat)2

—

—

E to C diode forward voltage VD

—

—

Notes: 1. Pulse test

2. Marking is “CT”.

Max Unit

—

V

—

V

—

V

1.0 µA

10

µA

30000

1.5 V

2.0 V

2.0 V

2.5 V

3.0 V

Test conditions

IC = 0.1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 100 V, IE = 0

VCE = 100 V, RBE = ∞

VCE = 3 V, IC = 1 A*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

ID = 1.5 A*1

2

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