IPI200N15N3G(2010) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IPI200N15N3G
(Rev.:2010)

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB200N15N3 G IPD200N15N3 G

IPI200N15N3 G IPP200N15N3 G

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

Thermal resistance, junction -

ambient

R thJA minimal footprint

-

6 cm2 cooling area3)

-

-

1 K/W

-

75

-

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

150

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=90 µA

2

3

Zero gate voltage drain current

I DSS

V DS=120 V, V GS=0 V,

T j=25 °C

-

0.1

-V

4

1 µA

Gate-source leakage current

V DS=120 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

10

100

1

100 nA

Drain-source on-state resistance

R DS(on) V GS=10 V, I D=50 A

-

16

20 mΩ

Gate resistance

Transconductance

V GS=8 V, I D=25 A

-

16

20

RG

-

2.4

g fs

|V DS|>2|I D|R DS(on)max,

I D=50 A

29

57

-Ω

-S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.05

page 2

2010-04-28

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