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Part Name
Description
IPI200N15N3G(2010) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI200N15N3G
(Rev.:2010)
OptiMOS™3 Power-Transistor
Infineon Technologies
IPI200N15N3G Datasheet PDF : 12 Pages
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1 Power dissipation
P
tot
=f(
T
C
)
160
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
60
120
40
80
20
40
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
10
2
10
1
10
0
10
-1
10
-1
Rev. 2.05
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
0
0.5
0.2
0.1
10
-1
0.05
0.02
0.01
single pulse
10
0
10
1
10
2
V
DS
[V]
10
-2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
page 4
2010-04-28
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