IPI200N15N3G View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI200N15N3G Datasheet PDF : 12 Pages
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Parameter
Symbol Conditions
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=75 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=75 V, V GS=10 V,
-
t d(off)
I D=50 A, R G,ext=1.6 W
-
tf
-
1820
214
5
14
11
23
6
- pF
-
-
21 ns
17
35
9
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
10
14 nC
Q gd
-
Q sw
V DD=75 V, I D=50 A,
V GS=0 to 10 V
-
Qg
-
4
6
9
13
23
31
V plateau
-
5.7
-V
Q oss
V DD=75 V, V GS=0 V
-
60
79 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=50 A,
T j=25 °C
t rr
V R=75 V, I F=I S,
Q rr
di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
-
-
50 A
-
-
220
-
1
1.2 V
-
106
- ns
-
332
- nC
Rev. 2.07
page 3
2014-01-09
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