IPI200N15N3G View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI200N15N3G Datasheet PDF : 12 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=50 A; V GS=10 V
50
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
45
3.5
40
900 µA
3
35
90 µA
30
2.5
25
98%
2
20
typ
1.5
15
1
10
5
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
102
25 °C
102
Coss
175 °C
25°C, 98%
101
101
Crss
175°C, 98%
0
Rev. 2.07
20
40
60
80
100
VDS [V]
100
0
page 6
0.5
1
1.5
2
VSD [V]
2014-01-09
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