IPI200N25N3G(2010) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI200N25N3G Datasheet PDF : 11 Pages
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Parameter
Symbol Conditions
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=100 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=100 V,
-
V GS=10 V, I D=25 A,
t d(off)
R G=1.6 #
-
tf
-
5340
297
4
18
20
45
12
7100 pF
395
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q gd
-
Q sw
V DD=100 V, I D=25 A,
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=100 V, V GS=0 V
-
22
- nC
7
-
13
-
64
86
4.2
-V
135
179 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
-
-
64 A
-
-
256
Diode forward voltage
V SD
V GS=0 V, I F=64 A,
T j=25 °C
-
1
1.2 V
Reverse recovery time
Reverse recovery charge
t rr
V R=100 V, I F=25 A,
-
170
- ns
Q rr
di F/dt =100 A/µs
-
780
- nC
4) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2010-10-19
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