IPI200N25N3G(2010) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI200N25N3G Datasheet PDF : 11 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=64 A; V GS=10 V
70
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
60
50
40
30
98%
typ
20
10
3.5
3
2700 µA
270 µA
2.5
2
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20
20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
104
103
Ciss
103
Coss
102
Crss
101
102
175 °C
25°C, 98%
175°C, 98%
101
25 °C
0
Rev. 2.3
40
80
120
VDS [V]
100
160
0
page 6
0.5
1
1.5
2
VSD [V]
2010-10-19
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