IPI200N25N3G(2010) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IPI200N25N3G
(Rev.:2010)

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

Thermal resistance, junction -

ambient

R thJA minimal footprint

-

6 cm2 cooling area3)

-

-

0.5 K/W

-

62

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V (BR)DSS V GS=0 V, I D=1 mA

250

V GS(th) V DS=V GS, I D=270 µA

2

I DSS

V DS=200 V, V GS=0 V,

T j=25 °C

-

V DS=200 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on) V GS=10 V, I D=64 A

-

RG

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=64 A

61

-

3

0.1

10

1

17.5

2.4

122

-V

4

1 µA

100

100 nA

20 m#

-#

-S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.3

page 2

2010-10-19

Share Link: