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Part Name
Description
IPI200N25N3G(2010) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI200N25N3G
(Rev.:2010)
OptiMOS™3 Power-Transistor
Infineon Technologies
IPI200N25N3G Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
Parameter
Symbol Conditions
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=100 V,
-
V
GS
=10 V,
I
D
=25 A,
t
d(off)
R
G
=1.6
#
-
t
f
-
5340
297
4
18
20
45
12
7100 pF
395
-
- ns
-
-
-
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q
gs
-
Q
gd
-
Q
sw
V
DD
=100 V,
I
D
=25 A,
V
GS
=0 to 10 V
-
Q
g
-
V
plateau
-
Q
oss
V
DD
=100 V,
V
GS
=0 V
-
22
- nC
7
-
13
-
64
86
4.2
-V
135
179 nC
Reverse Diode
Diode continous forward current
Diode pulse current
I
S
I
S,pulse
T
C
=25 °C
-
-
64 A
-
-
256
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=64 A,
T
j
=25 °C
-
1
1.2 V
Reverse recovery time
Reverse recovery charge
t
rr
V
R
=100 V,
I
F
=25 A,
-
170
- ns
Q
rr
d
i
F
/d
t
=100 A/µs
-
780
- nC
4)
See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2010-10-19
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