NDD05N50Z(2013) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NDD05N50Z Datasheet PDF : 12 Pages
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NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
10.0
TJ = 150°C
1.0
0.1
0 50 100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
1200
1100
1000
900
TJ = 25°C
VGS = 0 V
f = 1 MHz
800
700
600
Ciss
500
400
300
200
100 Crss
0
05
Coss
10 15 20 25 30 35 40 45 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
QGS
6.0
5.0
4.0
3.0
2.0
1.0
0.0
02
VDS
46
300
QT
250
QGD
200
VGS
150
100
VDS = 250 V
ID = 5 A
50
TJ = 25°C
0
8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
VDD = 250 V
ID = 5 A
VGS = 10 V
100
10
td(off)
tr
tf
td(on)
1.0
1
10
100
RG, GATE RESISTANCE (W)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
100
10
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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