NGB8206AN View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NGB8206AN Datasheet PDF : 9 Pages
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NGB8206N, NGB8206AN
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS (Note 3)
Threshold Temperature Coefficient (Neg-
ative)
Collector−to−Emitter On−Voltage
Symbol
VCE(on)
Test Conditions
IC = 6.5 A,
VGE = 3.7 V
IC = 9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
IC = 10 A,
VGE = 4.5 V
NGB8206
IC = 10 A,
VGE = 4.5 V
NGB8206A
IC = 15 A,
VGE = 4.5 V
NGB8206
IC = 15 A,
VGE = 4.5 V
NGB8206A
IC = 20 A,
VGE = 4.5 V
Forward Transconductance
gfs
IC = 6.0 A,
VCE = 5.0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS f = 10 kHz, VCE = 25 V
Transfer Capacitance
CRSS
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 25°C
Min Typ Max Unit
3.8 4.6 6.0 mV/°C
0.95 1.15 1.35 V
0.70 0.95 1.15
1.0 1.30 1.40
0.95 1.25 1.45
0.8 1.05 1.25
1.1 1.4 1.50
0.85 1.15 1.4
0.7 0.95 1.2
1.0 1.3 1.6*
1.0 1.3 1.6
0.8 1.05 1.4
1.1 1.4 1.7*
0.9 1.2 1.6
0.8 1.05 1.4
1.0 1.2 1.7*
1.15 1.45 1.7
1.0 1.3 1.55
1.25 1.55 1.8*
1.0 1.3 1.7
1.0 1.3 1.55
1.1 1.35 1.8*
1.3 1.6 1.9
1.2 1.5 1.8
1.4 1.75 2.0*
10
18
25 Mhos
1100 1300 1500 pF
70
80
90
18
20
22
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