4017B View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
4017B Datasheet PDF : 16 Pages
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NXP Semiconductors
HEF4017B
5-stage Johnson decade counter
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IDD
Tstg
Tamb
Ptot
supply current
storage temperature
ambient temperature
total power dissipation
Tamb = −40 °C to +125 °C
DIP16 package
SO16 package
P
power dissipation
per output
[1] For DIP16 package: Ptot derates linearly with 12 mW/K above 70 °C.
[2] For SO16 package: Ptot derates linearly with 8 mW/K above 70 °C.
9. Recommended operating conditions
Min
-
−65
−40
[1] -
[2] -
-
Max
Unit
50
mA
+150
°C
+125
°C
750
mW
500
mW
100
mW
Table 5.
Symbol
VDD
VI
Tamb
∆t/∆V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
in free air
input transition rise and fall rate
VDD = 5 V
VDD = 10 V
VDD = 15 V
10. Static characteristics
Min Typ Max
Unit
3
-
15
V
0
-
−40 -
VDD
V
+125 °C
-
-
3.75
ns/V
-
-
0.5
ns/V
-
-
0.08
ns/V
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter Conditions
VDD
Tamb = −40 °C
Min Max
Tamb = 25 °C
Min Max
VIH
HIGH-level |IO| < 1 µA
input voltage
5V
10 V
3.5
-
3.5
-
7.0
-
7.0
-
15 V
11.0 - 11.0 -
VIL
LOW-level
|IO| < 1 µA
input voltage
5V
10 V
-
1.5
-
1.5
-
3.0
-
3.0
15 V
-
4.0
-
4.0
VOH
HIGH-level |IO| < 1 µA;
5V
4.95 - 4.95 -
output voltage VI = VSS or VDD 10 V
9.95 - 9.95 -
15 V 14.95 - 14.95 -
VOL
LOW-level
|IO| < 1 µA;
5V
output voltage VI = VSS or VDD 10 V
- 0.05 - 0.05
- 0.05 - 0.05
15 V
- 0.05 - 0.05
Tamb = 85 °C
Min Max
3.5
-
7.0
-
11.0 -
-
1.5
-
3.0
-
4.0
4.95 -
9.95 -
14.95 -
- 0.05
- 0.05
- 0.05
Tamb = 125 °C Unit
Min Max
3.5
-V
7.0
-V
11.0 - V
-
1.5 V
-
3.0 V
-
4.0 V
4.95 - V
9.95 - V
14.95 - V
- 0.05 V
- 0.05 V
- 0.05 V
HEF4017B_4
Product data sheet
Rev. 04 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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