4017B View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
4017B Datasheet PDF : 16 Pages
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NXP Semiconductors
HEF4017B
5-stage Johnson decade counter
Table 6. Static characteristics …continued
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter Conditions
VDD
Tamb = −40 °C
Min Max
IOH
HIGH-level VO = 2.5 V
output current VO = 4.6 V
5V
−1.7 -
5 V −0.64 -
VO = 9.5 V
10 V
−1.6 -
VO = 13.5 V
15 V
−4.2 -
IOL
LOW-level
VO = 0.4 V
output current VO = 0.5 V
5V
10 V
0.64 -
1.6
-
VO = 1.5 V
15 V
4.2
-
II
input leakage
current
15 V
- ±0.1
IDD
supply current IO = 0 A;
5V
VI = VSS or VDD 10 V
-
5
-
10
15 V
-
20
CI
input
capacitance
-
-
-
Tamb = 25 °C
Min Max
−1.4 -
−0.5 -
−1.3 -
−3.4 -
0.5
-
1.3
-
3.2
-
- ±0.1
-
5
-
10
-
20
-
7.5
Tamb = 85 °C
Min Max
−1.1 -
−0.36 -
−0.9 -
−2.4 -
0.36 -
0.9
-
2.4
-
- ±1.0
- 150
-
300
-
600
-
-
Tamb = 125 °C Unit
Min Max
−1.1 - mA
−0.36 - mA
−0.9 - mA
−2.4 - mA
0.36 - mA
0.9
- mA
2.4
- mA
- ±1.0 µA
-
150 µA
-
300 µA
-
600 µA
-
- pF
11. Dynamic characteristics
Table 7. Dynamic characteristics
Tamb = 25 °C; VSS = 0 V; for test circuit see Figure 10
Symbol Parameter
Conditions
VDD
tPHL
HIGH to LOW
CP0, CP1 → Q0 to Q9; 5 V
propagation delay see Figure 7
10 V
15 V
CP0, CP1 → Q5-9;
see Figure 7
5V
10 V
15 V
MR → Q1 to Q9;
see Figure 8
5V
10 V
15 V
Extrapolation formula[1]
113 ns + (0.55 ns/pF) CL
44 ns + (0.23 ns/pF) CL
32 ns + (0.16 ns/pF) CL
118 ns + (0.55 ns/pF) CL
44 ns + (0.23 ns/pF) CL
32 ns + (0.16 ns/pF) CL
88 ns + (0.55 ns/pF) CL
39 ns + (0.23 ns/pF) CL
27 ns + (0.16 ns/pF) CL
Min Typ Max Unit
- 140 280 ns
-
55 110 ns
-
40 80 ns
- 145 290 ns
-
55 110 ns
-
40 80 ns
- 115 230 ns
-
50 100 ns
-
35 70 ns
HEF4017B_4
Product data sheet
Rev. 04 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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