QSB34(2004) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
QSB34 Datasheet PDF : 6 Pages
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QSB34GR, QSB34ZR
SURFACE MOUNT SILICON
PIN PHOTODIODE
QSB34
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Reverse Voltage
IR = 0.1 mA
VR
32
—
Dark Reverse Current
VR = 10 V
IR(D)
—
30
Peak Sensitivity
VR = 5 V
λPK
940
Reception Angle @ 1/2 Power
Θ
±60
Photo Current
Ee = 1.0 mW/cm2, VCE = 5 V(4)
IPH
25
37
—
Capacitance
VR = 3 V
C
25
Rise Time
Fall Time
VR = 10 V, RL = 50 Ω
tr
tf
20
20
Spectral Sensitivity
Sλ
.40
Units
V
nA
nm
Degrees
µA
pF
ns
ns
A/W
TYPICAL PERFORMANCE CURVES
100
80
60
40
20
0
600 800
Ta = 25°C
900 1000 1100 1200 1300
λ – Wave Length – Nanometers
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
80
60
40
20
VR = 5V
λ = 940nm
0
0
0.5
1.0
1.5
Ee - IRRADIANCE (mW/cm2)
Fig. 2 Short Circuit Current vs. Irradiance
© 2004 Fairchild Semiconductor Corporation
Page 2 of 6
10/19/04
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