ISPLSI1032E-100LJN View Datasheet(PDF) - Lattice Semiconductor
Part Name
Description
Manufacturer
ISPLSI1032E-100LJN Datasheet PDF : 17 Pages
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Specifications ispLSI 1032E
Absolute Maximum Ratings 1
Supply Voltage Vcc ...................................-0.5 to +7.0V
Input Voltage Applied ........................ -2.5 to VCC +1.0V
Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V
Storage Temperature ................................ -65 to 150°C
NS Case Temp. with Power Applied .............. -55 to 125°C
IG Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
S operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
DE is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
W SYMBOL
NE VCC
R VIL
FO VIH
Supply Voltage
Input Low Voltage
Input High Voltage
PARAMETER
Commercial TA = 0°C to + 70°C
Industrial
TA = -40°C to + 85°C
MIN.
4.75
4.5
0
2.0
MAX. UNITS
5.25
V
5.5
V
0.8
V
Vcc+1
V
Table 2-0005/1032E
Capacitance (TA=25oC, f=1.0 MHz)
A SYMBOL
PARAMETER
2E C1
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
03 C2
Y0 Clock Capacitance
I 1 Data Retention Specifications
S PARAMETER
L Data Retention
isp Erase/Reprogram Cycles
MINIMUM
20
10000
TYPICAL
8
UNITS
pf
15
pf
MAXIMUM
–
–
TEST CONDITIONS
VCC = 5.0V, VPIN = 2.0V
VCC = 5.0V, VPIN = 2.0V
Table 2-0006/1032E
UNITS
Years
Cycles
Table 2-0008/1032E
USE
3
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