40N60A4D View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
40N60A4D Datasheet PDF : 10 Pages
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HGT1N40N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
t rr
RθJC
IEC = 40A, dIEC/dt = 200A/µs
IGBT
Diode
-
48
55
ns
-
-
0.42
oC/W
-
-
1.8
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves (Unless Otherwise Specified)
120
VGE = 15V
100
TJ = 150oC
80
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225
TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300
TC VGE
75oC 15V
12
VCE = 390V, RG = 2.2Ω, TJ = 125oC
1200
10
1000
100
ISC
8
800
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.42oC/W, SEE NOTES
10
1
10
20
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
6
600
tSC
4
400
2
200
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
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