2N7002 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
2N7002 Datasheet PDF : 2 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N7002
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
Description
Designed for low voltage and low current applications
such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
Pinning
1 = Gate
2 = Source
3 = Drain
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS=1MW)
VDGR
60
V
Gate-Source Voltage (Continuous)
VGS
20
V
Drain Current (Continuous, TC=25oC)(1)
ID
115
mA
Drain Current (Pulsed)(2)
IDM
800
mA
Total Power Dissipation
Derate above 25oC
Operating Junction Temperature
Storage Temperature
PD
TJ
TSTG
225
1.8
-55 to+150
-55 to+150
mW
mW/oC
oC
oC
Maximum Lead Temperature, for
10 Seconds Solding Purpose
TL
260
oC
SOT-23
.020(0.50)
.012(0.30)
3
.063(1.60) .108(2.80)
.047(1.20) .083(2.10)
1
2
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.120(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.0071(0.18)
.0035(0.09)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Sourse Forward Leakage Current
Gate-Sourse Reverse Leakage Current
Gate Threshold Voltage(2)
On-State Drain Current(2)
Static Drain-Source On-State Voltage(2)
Static Drain-Source On-State Resistance(2)
Forward Transconductance(2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max
V(BR)DSS
60
-
-
IDSS
-
-
1
IGSSF
-
-
100
IGSSR
-
-
-100
VGS(th)
1
-
2.5
ID(on)
500
-
-
VDS(on)1
-
-
1.5
VDS(on)2
-
-
3.75
RDS(on)1
-
-
7.5
RDS(on)2
-
-
7.5
gFS
80
-
-
Ciss
-
-
50
Coss
-
-
25
Crss
-
-
5
Thermal Resistance, Junction to Ambient
RqJA
-
-
417
(1)The Power Dissipation of the package may result in a lower continuous drain current.
(2)Pulse Test: Pulse Width 300ms, Duty Cycle 2%
Unit
V
mA
nA
nA
V
mA
V
V
W
W
mS
pF
pF
pF
oC/W
Test Conditions
ID=10mA, VGS=0
VDS=60V, VGS=0
VGSF=20V, VDS=0
VGSR=-20V, VDS=0
VDS=VGS, ID=0.25mA
VDS>2VDS(on), VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
VDS>2VDS(on), ID=200mA
VDS=25V, VGS=0, f=1MHZ
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