2SC3361S6 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

Manufacturer

2SC3361S6

NPN Epitaxial Planar Silicon Transistors

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Gain bandwidth product

Common base output capacitance

Collector-to-emitter saturation voltage

Base-to-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Delay time

Rise time

Storage time

Fall time

Symbol

Testconditons

IcBO VCB = 40V , IE = 0

IEBO VEB = 4V , IC = 0

hFE VCE = 6V , IC = 1mA

fT VCE = 6V , IC = 1mA

Cob VCB = 6V , f = 1MHz

VCE(sat) IC = 10mA , IB =1mA

VBE(sat) IC = 10mA , IB =1mA

V(BR)CBO IC = 10ìA , IE = 0

V(BR)CEO IC = 1mA , RBE =

V(BR)EBO IE = 10ìA , IC = 0

td

tr

tstg

tf

hFE Classification

Marking

hFE

S4

90 180

S5

135 270

S6

200 400

Product specification

2SC3361

Min Typ Max Unit

0.1 ìA

0.1 ìA

90

400

100

MHz

2.7

pF

0.1 0.4 V

0.75 1.1 V

60

V

50

V

5

V

40

ns

80

ns

230

ns

160

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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