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2SB857 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
Manufacturer
2SB857
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SB857 Datasheet PDF : 5 Pages
1 2 3 4 5
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
2SB857
2SB858
Unit
–70
–70
V
–50
–60
V
–5
–5
V
–4
–4
A
–8
–8
A
40
40
W
150
150
°C
–45 to +150
–45 to +150
°C

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