Product specification
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR) DSS
IGSS
IDSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Condition
VGS = 0V, ID =10µA
VDS =0V, VGS =±20V
VDS =30V, VGS =0V
VDS =3V, ID =100µA
VGS =4V, ID =10mA
VGS =2.5V, ID =1mA
VDS =3V, ID =10mA
VDS =5V,VGS =0V,f =1MHz
VGS=5V,VDD=5V, ID =10mA
RL=500Ω,RG=10Ω
Min Typ Max Unit
30
V
±2
µA
1.0
µA
0.8
1.5
V
5
8
Ω
7
13
20
mS
13
9
pF
4
15
35
ns
80
80
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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