HMT325S6CFR8C-G7 View Datasheet(PDF) - Hynix Semiconductor
Part Name
Description
Manufacturer
HMT325S6CFR8C-G7 Datasheet PDF : 48 Pages
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DDR3-1333 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 33.
Speed Bin
DDR3-1333H
CL - nRCD - nRP
Parameter
Symbol
Internal read
command to first data
tAA
ACT to internal read or
write delay time
tRCD
PRE command period tRP
ACT to ACT or REF
command period
tRC
ACT to PRE command
period
tRAS
CL = 5
CL = 6
CWL = 5
CWL = 6, 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
CL = 7 CWL = 6 tCK(AVG)
CWL = 7
CWL = 5
CL = 8 CWL = 6
CWL = 7
CWL = 5, 6
CL = 9 CWL = 7
CWL = 5, 6
CL = 10
CWL = 7
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Supported CL Settings
Supported CWL Settings
min
13.5
(13.125)5,9
13.5
(13.125)5,9
13.5
(13.125)5,9
49.5
(49.125)5,9
9-9-9
max
20
—
—
—
36
9 * tREFI
3.0
2.5
1.875
1.875
1.5
1.5
3.3
Reserved
3.3
Reserved
Reserved
Reserved
< 2.5
(Optional)5,9
Reserved
Reserved
< 2.5
Reserved
Reserved
<1.875
Reserved
<1.875
(Optional)
5, 6, 8, (7), 9, (10)
5, 6, 7
Unit
Note
ns
ns
ns
ns
ns
ns
1, 2, 3, 4, 7, 10
ns
4
ns
1, 2, 3, 7
ns
1, 2, 3, 4, 7
ns
4
ns
4
ns
1, 2, 3, 4, 7
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3, 7
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3
ns
5
nCK
nCK
Rev. 1.0/Sep. 2012
31
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