AP4511GM View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
Manufacturer
AP4511GM Datasheet PDF : 7 Pages
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AP4511GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
-35 -
-
V
- -0.02 - V/℃
- 32 40 mΩ
- 50 60 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=-10V, ID=-6A
VDS=-35V, VGS=0V
VDS=-28V, VGS=0V
VGS=±20V
ID=-6A
VDS=-28V
VGS=-4.5V
VDS=-18V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=18Ω
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
-
9
-
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 10 16 nC
-
2
- nC
-
6
- nC
- 10 - ns
-
6
- ns
- 26 - ns
-
7
- ns
- 690 1100 pF
- 165 - pF
- 130 - pF
- 5.2 7.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-6A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 20 - ns
- 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
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