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ESM3045DV View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ESM3045DV
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESM3045DV Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ESM3045DV
THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
1
2
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER #
ICEV #
Collector Cut-off
Current (RBE = 5 )
Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 oC
Tj = 100 oC
IEBO # Emitter Cut-off Current
(IC = 0)
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
hFEDC Current Gain
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 450 V
IC = 20 A VCE = 5 V
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 15 A
IC = 15 A
IC = 20 A
IC = 20 A
IB = 0.3 A
IB = 0.3 A
IB = 1.2 A
IB = 1.2 A
Tj = 100 oC
Tj = 100 oC
VBE(sat)Base-Emitter
Saturation Voltage
IC = 20 A IB = 1.2 A
IC = 20 A IB = 1.2 A Tj = 100 oC
diC/dt
VCE(3
µs)••
Rate of Rise of
On-state Collector
Collector-Emitter
Dynamic Voltage
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 0.45 A Tj = 100 oC
VCC = 300 V RC = 20
IB1 = 0.45 A Tj = 100 oC
Min. Typ.
450
120
1.2
1.3
1.4
1.6
2.1
2.1
125 160
4.5
Max.
1.5
17
1
12
1
2
2
3
8
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
VCE(5 Collector-Emitter
µs)•• Dynamic Voltage
VCC = 300 V RC = 20
IB1 = 0.45 A Tj = 100 oC
2.5 4.5
V
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 15 A VCC = 50 V
VBB = -5 V RBB = 0.6
Vclamp = 450 V IB1 = 0.3 A
L = 0.17 mH Tj = 100 oC
VCEW
VF
Maximum Collector
Emitter Voltage
Without Snubber
Diode Forward Voltage
ICWoff = 24 A IB1 = 1.2 A
VBB = -5 V VCC = 50 V
L = 0.1 mH RBB = 0.6
Tj = 125 oC
IF = 20 A Tj = 100 oC
IRM Reverse Recovery
VCC = 200 V IF = 20 A
Current
diF/dt = -125 A/µs L < 0.05 µH
Tj = 100 oC
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 1.47 + 0.0026 IF P = 1.47 IF(AV) + 0.0026 I2F(RMS)
2.1
4
µs
0.15 0.4
µs
0.5
1.2
µs
450
V
1.7
2
V
11
14
A
2/8

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