IRFI4229PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRFI4229PBF Datasheet PDF : 8 Pages
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IRFI4229PbF
1800
100
L = 220nH
1600
1400
1200
1000
800
600
400
C = 0.3µF
C = 0.2µF
C = 0.1µF
TJ = 150°C
10
1
TJ = 25°C
200
0
20 40 60 80 100 120 140 160
Temperature (°C)
Fig 7. Typical EPULSE vs.Temperature
7000
6000
5000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
4000
3000
2000
Coss
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
12.0
ID= 11A
10.0
8.0
VDS= 200V
VDS= 125V
VDS= 50V
6.0
4.0
1000
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
2.0
0.0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10msec
1msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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