DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IRFI4229PBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFI4229PBF
IR
International Rectifier IR
IRFI4229PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
200
180
ID = 11A
160
140
120
100
TJ = 125°C
80
60
TJ = 25°C
40
20
0
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
5.0
4.0
ID = 250µA
IRFI4229PbF
450
400
ID
TOP 2.3A
350
2.7A
BOTTOM 11A
300
250
200
150
100
50
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
60
ton= 1µs
Duty cycle = 0.25
50
Half Sine Wave
Square Pulse
40
30
3.0
20
10
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
10
0
25
50
75
100 125 150
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.3671 0.000287
τ3 τ3
1.0580 0.162897
1.3076 2.426
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
10
100
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]