2SD400 View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
2SD400 Datasheet PDF : 1 Pages
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Product specification
TO-92L Plastic-Encapsulate Transistors
2SD400 TRANSISTOR (NPN)
FEATURES
Low-Frequency power Amp, Electronic Governor Applications
TO-92L
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
25
5
1
0.75
150
-55-150
Unit
V
V
V
A
W
℃
℃
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
Test conditions
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10µA, IC=0
ICBO
VCB=20V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=2V, IC=50mA
hFE(2) VCE=2V, IC=1A
VCE(sat) IC=500mA, IB=50mA
VBE(sat) IC=500mA, IB=50mA
fT
VCE=10V, IC=50mA
Cob VCB=10V, f=1MHz
Min Typ Max Unit
25
V
25
V
5
V
1
µA
1
µA
60
560
30
0.3 V
1.2 V
180
MHz
15
pF
CLASSIFICATION OF hFE(1)
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
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